Metalorganic Chemical Vapor Deposition

There are several thin-film deposition methods that require the use of different tools specifically tailored for maintaining the necessary requirements for successful thin-film application.
One of the older, yet effective methods of thin-film application on surfaces is an ultra-high vacuum deposition method, known by engineers as MBE (Molecular Beam Epitaxy). This technique is thought of as a highly controlled clean method of thin-film deposition. This approach involves placing materials in a special vessel where they are heated at very high temperatures turning them into gas. The gas will be flowing to the material it’s supposed to be layered on top of. Because it is crucial to control the environment, using advanced tools is very important in the process. However, MBE isn’t one of the go to methods since a newer technique yields higher results, and can deal with more variables at the same time. This technique is known as MOCVD, Metalorganic Chemical Vapor Deposition. During this process the materials travel in the form of gas and transfer onto the surfaces they’re supposed to be deposited. The build up of the materials on the substrates happens as a chemical reaction, and produces top standard, epitaxial thin-film deposition. The temperature necessary for this process is much higher than during MBE, and since the pressure is very similar to atmospheric, the measuring tools are very small in size.

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